作者: Satoshi Inagaki , Kenichi Yoshikawa , Yoshiharu Hayano
DOI: 10.1021/JA00062A041
关键词:
摘要: Bond-to-bond delocalization of σ-electrons in silanes and phosphanes was analyzed. σ-Electrons the Si-Si P-P bonds were numerically shown to delocalize more than those C-C π-electrons C=C bonds. The between geminal is antibonding as previously reported for As bond angle acute, property increases decreases phosphanes. This implies that three-membered ring strained less concept substantiated. correlation strain confirmed