Dynamics of Radical Cation of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Extreme-Ultraviolet and Electron Beam Lithographies

摘要: The elucidation of the reaction mechanism after irradiation ionizing radiation onto resist polymers is an important issue for extreme-ultraviolet and electron beam chemically amplified resist. dynamics radical cations essential elucidating acid formation (deprotonation) in resists. transient absorption poly(4-methoxystyrene) (PMOS) was observed 1,2-dichloroethane p-dioxane solutions by pulse radiolysis. In near-infrared region, a characteristic charge resonance band, which represents π–π interaction between two benzene rings intramolecular PMOS dimer cation [(Ph–OCH3)2+], observed. presence halogenated hydrocarbon molecules acting as scavengers, yield (Ph–OCH3)2+ enhanced ion/charge transfer complex. Density functional theory (DFT) calculations were also performed to investigate electronic state (Ph–OCH3)2+.