Reliability evaluation of direct chip attached silicon carbide pressure transducers
作者： R.S. Okojie , E. Savrun , Phong Nguyen , Vu Nguyen , C. Blaha
DOI: 10.1109/ICSENS.2004.1426246
关键词:
摘要: An accelerated stress test (AST) protocol has been developed and used to evaluate the reliability of 6H-silicon carbide (SiC) pressure transducers for operation up 400 /spl deg/C 100 hours. After several cyclic excursions deg/C, maximum drift zero offset voltage at 25 was 1.9 mV, while 2.0 mV. The full-scale sensitivity before after AST 36.6 mu/V/V/psi 20.5 with a plusmn/1 mu/V/V/psi. No systematic degradation observed.
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