Structural characterisation of erbium silicide thin films on an Si(111) substrate
作者： N. Frangis , G. Van Tendeloo , J. Van Landuyt , P. Muret , T.T.A. Nguyen
DOI: 10.1016/0925-8388(95)02131-0
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摘要: Abstract ErSi 2−x films ( x = 0.1–0.3) grown by co-evaporation at different deposition ratios have been characterised transmission electron microscopy, diffraction and high resolution microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of basic structure. The phases related to deviations from stoichiometry similar crystallographic shear structures. 1.9 material contains precipitates, illustrating preference 1.7 composition maintained.
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