Infrared response of Pt/Si/ErSi1.7 heterostructure: Tunable internal photoemission sensor
作者： L. Pahun , Y. Campidelli , F. Arnaud d’Avitaya , P. A. Badoz
DOI: 10.1063/1.107393
关键词: Photodetector 、 Wavelength 、 Silicon 、 Heterojunction 、 Materials science 、 Optoelectronics 、 Quantum efficiency 、 Rectangular potential barrier 、 Cutoff frequency 、 Infrared
摘要: We present the first internal photoemission response of a metal‐Si‐metal heterostructure. Using Pt/Si/ErSi1.7 system, we show that photoresponse this new device can be strongly modified when bias few hundred mV is applied between two metallic electrodes: cutoff wavelength shifted from 1.4 μm to above 5 μm, and quantum efficiency increased up 5% at 1.2 positive front Pt electrode. These dramatic changes are attributed modulation effective potential barrier experienced by photoexcited carriers crossing Si film.
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sci-hub.se 参考文章(8)
B.-Y. Tsaur, C.K. Chen, B.A. Nechay, IrSi Schottky-barrier infrared detectors with wavelength response beyond 12 mu m IEEE Electron Device Letters. ,vol. 11, pp. 415- 417 ,(1990) , 10.1109/55.62974
Harold U. Baranger, Lino Reggiani, Hot-Electron Transport in Semiconductors ,(1985)
J. Y. Duboz, P. A. Badoz, F. Arnaud d’Avitaya, J. A. Chroboczek, Electronic transport properties of epitaxial erbium silicide/silicon heterostructures Applied Physics Letters. ,vol. 55, pp. 84- 86 ,(1989) , 10.1063/1.102392
R. H. Fowler, The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures Physical Review. ,vol. 38, pp. 45- 56 ,(1931) , 10.1103/PHYSREV.38.45
F. Arnaud d'Avitaya, P.-A. Badoz, Y. Campidelli, J.A. Chroboczek, J.-Y. Duboz, A. Perio, J. Pierre, Growth, characterization and electrical properties of epitaxial erbium silicide Thin Solid Films. ,vol. 184, pp. 283- 293 ,(1990) , 10.1016/0040-6090(90)90424-C
R. M. A. Azzam, Stanley S. Ballard, N. M. Bashara, Ellipsometry and polarized light ,(1977)
Edward D. Palik, Handbook of Optical Constants of Solids ,(1985)
T. L. Lin, J. Maserjian, Novel Si1−xGex/Si heterojunction internal photoemission long‐wavelength infrared detectors Applied Physics Letters. ,vol. 57, pp. 1422- 1424 ,(1990) , 10.1063/1.103454