Electronic transport properties of epitaxial erbium silicide/silicon heterostructures
作者： J. Y. Duboz , P. A. Badoz , F. Arnaud d’Avitaya , J. A. Chroboczek
DOI: 10.1063/1.102392
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摘要: We studied electrical parallel and perpendicular transport in thin epitaxial erbium silicide films obtained by solid phase reaction codeposition of Er Si on (111) Si. Resistivity measurements show that the is metallic with a room‐temperature resistivity 34 μΩ cm; dependence Hall coefficient temperature can be explained two‐band conduction model. Magnetic effects are shown to affect low‐temperature coefficient. Perpendicular properties [current‐voltage I(V) capacitance‐voltage C(V) characteristics] internal photoemission methods silicide/n‐ or p‐type diodes. The diodes have perfect rectifying behavior Schottky barrier height about 0.74 eV measured methods. n‐type junction ohmic at room low temperatures; optical yield 0.28 eV. Some potential app...
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sci-hub.se 参考文章(12)
V. Malhotra, Electronic transport properties of TiSi2 thin films Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 2, pp. 10- 15 ,(1984) , 10.1116/1.582905
T. L. Martin, V. Malhotra, J. E. Mahan, Electronic transport properties of tungsten silicide thin films Journal of Electronic Materials. ,vol. 13, pp. 309- 325 ,(1984) , 10.1007/BF02656682
P. A. Badoz, E. Rosencher, J. Torres, G. Fishman, Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: Application to WSi2 Journal of Applied Physics. ,vol. 62, pp. 890- 895 ,(1987) , 10.1063/1.339695
J. A. Knapp, S. T. Picraux, Epitaxial formation of rare earth silicides by rapid annealing MRS Proceedings. ,vol. 54, pp. 261- 266 ,(1985) , 10.1557/PROC-54-261
J Pierre, E Siaud, D Frachon, Magnetic properties of rare earth disilicides RSi2 Journal of The Less Common Metals. ,vol. 139, pp. 321- 329 ,(1988) , 10.1016/0022-5088(88)90014-8
H. Norde, J. de Sousa Pires, F. d’Heurle, F. Pesavento, S. Petersson, P. A. Tove, The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) and p‐type silicon Applied Physics Letters. ,vol. 38, pp. 865- 866 ,(1981) , 10.1063/1.92201
K. N. Tu, R. D. Thompson, B. Y. Tsaur, Low Schottky barrier of rare‐earth silicide onn‐Si Applied Physics Letters. ,vol. 38, pp. 626- 628 ,(1981) , 10.1063/1.92457
J. A. Knapp, S. T. Picraux, Epitaxial growth of rare‐earth silicides on (111) Si Applied Physics Letters. ,vol. 48, pp. 466- 468 ,(1986) , 10.1063/1.96532
Shuichi Saitoh, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa, Single Crystalline Silicide Formation Japanese Journal of Applied Physics. ,vol. 20, pp. 1649- 1656 ,(1981) , 10.1143/JJAP.20.1649
J. Y. Duboz, P. A. Badoz, E. Rosencher, J. Henz, M. Ospelt, H. von Känel, A. Briggs, Electrical transport properties in epitaxial codeposited CoSi2layers on 〈111〉 Si Applied Physics Letters. ,vol. 53, pp. 788- 790 ,(1988) , 10.1063/1.100560