Electrical transport properties in epitaxial codeposited CoSi2layers on 〈111〉 Si

摘要: Electrical measurements (resistivity, Hall effect, and superconducting critical temperature) are performed in epitaxial CoSi2 layers obtained by room‐temperature codeposition of Co Si on 〈111〉 subsequently annealed between 250 650 °C. On the one hand, at low temperature (250–350 °C) exhibit poorer electrical characteristics than films realized solid phase epitaxy 650 °C, because both a lack carriers degraded mobility. A possible origin this fact could be presence unreacted atoms metal layer. other ex situ 700 °C show excellent characteristics, together with mirror‐like surfaces extremely smooth Si/CoSi2 interfaces, for silicide thicknesses ranging from 35 up to 500 A. Furthermore, comparing techniques, we that long‐range roughness (few hundreds angstroms) has no major influence steep increas...