IrSi Schottky-barrier infrared detectors with wavelength response beyond 12 mu m
作者： B.-Y. Tsaur , C.K. Chen , B.A. Nechay
DOI: 10.1109/55.62974
关键词:
摘要: Schottky-barrier infrared detectors with a 4-nm-thick IrSi electrode have been fabricated on p-Si substrates previously implanted low-energy boron ions. Low-energy ion implantation has used to form shallow p/sup +/-Si layer that lowers the barrier height of IrSi-Si contacts by image-force effect and field-assisted tunneling. cutoff wavelength beyond 12 mu m obtained this technique. The optical found spectral response measurements is 0.100 eV, which corresponds detector 12.4 m. >
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