The Ir/Si/ErSi 2 tunable infrared photoemission sensor
作者： I. Sagnes , Y. Campidelli , P. A. Badoz
DOI: 10.1007/BF02670650
关键词:
摘要: We present a new type of metal-silicon-metal infrared detector, the tunable photoemission sensor (TIPS), whose photoresponse can be tuned by an externally applied bias. The physical detection process this device is based on internal optically excited carriers between two metal layers vertical Ir/Si/ErSi2/Sisub system. show that experimental TIPS cut-off wavelength shifted from around 2 urn to more than 6 with quantum efficiency 3% at |i,m and 1% 3 when bias less IV Ir electrode. such heterostructure quantitatively explained using model derived Fowler formalism, taking into account dependence light absorbed in each metallic film four different processes structure. Dark current measurements structure indicate high detectivities (above 1010 cm√Hz /W 2µm 125K) may expected device.
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