Structural, optical and electrical properties of SnO2:Sb:Tb3+/porous silicon devices
作者： A Moadhen , H Elhouichet , S Romdhane , M Oueslati , J A Roger
DOI: 10.1088/0268-1242/18/7/319
关键词:
摘要: SnO2:Sb sol–gel derived thin films doped with Tb3+ were deposited on porous silicon (PS) layers. Transmission electron microscopy observations, diffraction patterns and energy dispersive x-ray analysis revealed the crystallization of small crystallites cassiterite embedded in layer presence ions SnO2 crystallites. The photoluminescence spectrum shows that emit highly after annealing at 500 °C. Preliminary characterizations electrical transient electroluminescence resulting nanocomposite structures are presented. We discuss I–V SnO2:Tb3+/PS device under both forward reverse bias conditions.
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