Synthesis and Characterization of Plasma-Polymer Gate Dielectric Films for Graphene Field Effect Transistor Devices
作者： Hyeon Jin Seo , Yeong Eun Gil , Ki-Hwan Hwang , Antony Ananth , Jin-Hyo Boo
DOI: 10.1007/S13391-019-00139-6
关键词:
摘要: In this study, a gate dielectric suitable for application in field effect transistors (FETs) was synthesized. Gate dielectrics were deposited using cyclohexane via plasma-enhanced chemical vapor deposition. These films synthesized on silicon wafers substrates with plasma powers adjusted from 10 to 60 W. Graphene nickel substrate by thermal deposition process and coupled the plasma-polymer water transfer. Alpha step, Fourier-transform infrared spectroscopy, Raman atomic force microscopy findings addition contact angle measurements analyzed characterize physical properties of thin film. Furthermore, probe station used FET devices fabricated such films.
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