Photoconductivity and optical stability of intrinsic μc-Si films formed by remote plasma-enhanced chemical-vapor deposition, remote pecvd
作者： M.J. Williams , C. Wang , G. Lucovsky
DOI: 10.1016/S0022-3093(05)80226-1
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摘要: μc-Si deposited by RPECVD is n-type with a room temperature dark conductivity of ∼6×10 −4 S/cm and an activation energy ∼0.3 eV, due to native donor-like defects . We report photoconductivity in B-doped μc-Si, emphasizing doping levels that are used exactly compensate the defects, produce high resistivity, highly photoconductive form μc-Si.
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C. Wang, M. J. Williams, G. Lucovsky, The preparation of microcrystalline silicon (μc‐Si) thin films by remote plasma‐enhanced chemical vapor deposition Journal of Vacuum Science and Technology. ,vol. 9, pp. 444- 449 ,(1991) , 10.1116/1.577430
P.G. Lecomber, G. Willeke, W.E. Spear, Some new results on transport and density of state distribution in glow discharge microcrystalline silicon Journal of Non-crystalline Solids. pp. 795- 798 ,(1983) , 10.1016/0022-3093(83)90290-9
G. Lucovsky, Cheng Wang, R.J. Nemanich, M.J. Williams, Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition Solar Cells. ,vol. 30, pp. 419- 434 ,(1991) , 10.1016/0379-6787(91)90075-Z