1.5-V CMOS exponential current generator
作者： Vassileios Kalenteridis , Spyridon Vlassis , Stylianos Siskos
DOI: 10.1007/S10470-012-9836-5
关键词:
摘要: A new low-voltage CMOS exponential current generator is proposed in this work. MOS transistors weak-inversion region and a master---slave technique for the temperature compensation were used. The circuit was fabricated with standard 0.35 μm process using single supply voltage of 1.5 V. Experimental results validate theoretical analysis verify effectiveness structure. 40 dB range linearly controlled output less than linearity error achieved. structure features ±1 ±3 deviations ±10% 80°C variations, respectively.
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