A 6.13 µW and 96 dB CMOS Exponential Generator
作者： Karama Mohammed Al-Tamimi , Munir A. Al-Absi
DOI: 10.1109/TVLSI.2013.2292093
关键词: Range (statistics) 、 CMOS 、 Generator (circuit theory) 、 Exponential function 、 Transistor 、 Optoelectronics 、 MOSFET 、 Linearity error 、 Materials science 、 Voltage
摘要: In this brief, a new low-voltage CMOS circuit to produce current-mode exponential characteristics is proposed. MOSFET transistors in weak-inversion region and translinear principle for the temperature cancellation were used. The functionality of proposed design confirmed with 0.35 μm process technology using ±0.75 V supply voltage. Results demonstrate theoretical analysis verify efficiency structure compared previously reported designs. Around 96 linear-in-dB output current range achieved ±0.5 dB linearity error over normalized input from -5.75 5.75. maximum deviation ±1.27 ±3.35 due 100 °C variations ±10% voltage fluctuation, respectively.
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