Method for manufacturing inter-level dielectric layer

摘要: The invention relates to a method for manufacturing an inter-level dielectric layer. layer is manufactured on the surface of wafer device by combining chemical mechanical polishing. comprises following steps: a, forming first layer; b, second which material different from that c, mainly polishing interface and d, secondarily form thickness same as depth ofa preset contact hole. By two layers with materials realizing removal through main using materials, can effectively overcome defect nonuniform each caused controlling amount dielectriclayers single long time during conventional