Metal front dielectric layer and preparation method thereof

作者: Li Min , Xu Qiang

DOI:

关键词:

摘要:

参考文章(9)
Eric Gerhard Liniger, Jeffrey Curtis Hedrick, Eva Erika Simonyi, John C. Hay, Andrew Robert Eckert, Kang-Wook Lee, Method of fabricating low-dielectric constant interlevel dielectric films for beol interconnects with enhanced adhesion and low-defect density ,(2002)
Daniel C. Edelstein, Darryl D. Restaino, Vishnubhai V. Patel, Alfred Grill, Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same ,(2003)
Darryl D. Restaino, Philip L. Flaitz, Yun-Yu Wang, Thomas M. Shaw, Lawrence A. Clevenger, Timothy Dalton, Derren N. Dunn, Stefanie R. Chiras, Chester T. Dziobkowski, James J. Demarest, Michael W. Lane, James R. Lloyd, Chih-Chao Yang, Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer ,(2006)
Ruan Zhongjie, Shi Honglin, Zhu Zanqi, Process for preparing dielectric layer between metal layers ,(2002)
Higashi Masahiko, Shishido Kiyokazu, Semiconductor device and manufacturing method thereof ,(2006)
Higashitani Keiichi, Ohno Takio, Kimura Masatoshi, Semiconductor device and method of fabricating the same ,(2000)