Semiconductor device and manufacturing method thereof
作者： Ohnishi Sadayuki
DOI:
关键词:
摘要: An SiCN layer 108, BCB 110 and MSQ 112 are deposited in this sequence on a copper interconnect line constituted by barrier metal 104 106. The is formed plasma polymerization of monomer containing divinylsiloxane bisbenzocyclobutene unit.
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