Manufacturing method of semicondcutor device
作者： Norio Okada , Tatsuya Usami , Takamasa Tanikuni , Koichi Ohto , Hiroaki Tomimori
DOI:
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摘要: In order to provide a manufacturing method of semiconductor device which can improve the interconnection lifetime, while controlling increase in resistance thereof, and, addition, raise stability; by applying plasma treatment surface copper 17 with source gas comprising nitrogen element being used, nitride layer 24 is formed, and thereafter silicon film 18 formed. Hereat, under , thin silicide 25
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