Semiconductor device having a refractory metal containing film and method for manufacturing the same
作者： Toshiyuki Takewaki , Mari Watanabe
DOI:
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摘要: A semiconductor device and a method for manufacturing the same of present invention in which is provided with fuse structure or an electrode pad structure, suppress copper blowing-out from containing metal film. The comprises silicon substrate, SiO2 film on films embedded film, TiN covering upper face boundary region between films, SiON films.
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