On-chip decoupling capacitor and method of making same

作者: Bruce A. Block , Richard Scott List , Ruitao Zhang

DOI:

关键词:

摘要: On-chip decoupling capacitor structures, and methods of fabricating such capacitors are disclosed. In one embodiment the present invention, a stack may consist bottom electrode/barrier; thin dielectric material having high constant; top electrode/barrier. an alternative embodiment, electrode and/or metal interconnect layer have three dimensional texture to increase surface area capacitor. An illustrative method embodying includes on-chip structure electrically connecting provide efficient capacitive de-coupling.

参考文章(14)
Thomas H. Baum, Steven M. Bilodeau, Michael W. Russell, Buskirk Peter C. Van, Chemical mechanical polishing of feram capacitors ,(1999)
Ting Cheong Ang, Shyue Fong Quek, Puay Ing Ong, Sang Yee Loong, High-K MOM capacitor ,(2000)
Mark R. Visokay, Glenn A. Cerny, Guoqiang Xing, Etchstop for integrated circuits ,(1998)
Mark R. Visokay, Luigi Colombo, Scott R. Summerfelt, Paul McIntyre, Adhesion promoting sacrificial etch stop layer in advanced capacitor structures ,(1998)
Mark Visokay, Francis Celii, Theodore S. Moise, Luigi Colombo, Stephen R. Gilbert, Scott R. Summerfelt, Guoqiang Xing, Justin F. Gaynor, Integrated circuit and method ,(2005)
Kuo-Tai Huang, Wen-Yi Hsieh, Tri-Rung Yew, Method of fabricating DRAM capacitor ,(1998)
Shigeo Ohnishi, Katsuji Iguchi, Nobuyuki Takenaka, Method of fabricating semiconductor memory device ,(1999)
Seungmoo Choi, Sailesh M. Merchant, Pradip K. Roy, DRAM capacitor including Cu plug and Ta barrier and method of forming ,(1999)