作者: Bruce A. Block , Richard Scott List , Ruitao Zhang
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摘要: On-chip decoupling capacitor structures, and methods of fabricating such capacitors are disclosed. In one embodiment the present invention, a stack may consist bottom electrode/barrier; thin dielectric material having high constant; top electrode/barrier. an alternative embodiment, electrode and/or metal interconnect layer have three dimensional texture to increase surface area capacitor. An illustrative method embodying includes on-chip structure electrically connecting provide efficient capacitive de-coupling.