High-K MOM capacitor
作者： Ting Cheong Ang , Shyue Fong Quek , Puay Ing Ong , Sang Yee Loong
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摘要: A method for fabricating a metal-oxide-metal capacitor is described. first insulating layer provided overlying semiconductor substrate. barrier metal and are deposited over the layer. titanium The exposed to an oxidizing plasma while simultaneously portion of where be formed light whereby reacts with form oxide. Thereafter, removed, leaving oxide formed. second layer, patterned wherein forms upper plate electrode, dielectric, bottom electrode MOM capacitor.
google.com.mx 参考文章(8)
Robert J. Cava, Jueinai Raynien Kwo, Roderick K. Watts, Eric W. Seelig, Shang Y. Hou, Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers ,(1996)
George Kerr, Yves Meheust, Method of manufacturing an integrated capacitor and device obtained by this method ,(1983)
David Yu Hu, Metal-oxide-metal capacitor for analog devices ,(1998)
Michael P. Brassington, Andreas G. Papaliolios, Ferroelectric memory cell arrangement having a split capacitor plate structure ,(1992)
Peter Zurcher, Robert E. Jones, Peir-Yung Chu, Ajay Jain, Method for making a ferroelectric device ,(1996)
Takashi Inushima, Shunpei Yamazaki, Method of forming an oxide insulating film ,(1991)
John Mark Drynan, Kuniaki Koyama, Method of manufacturing a semiconductor memory device ,(1997)