Method for making a ferroelectric device

摘要: A method for forming CMOS transistors and ferroelectric capacitors on a single substrate (10) with improved yield begins by (37a, 37b, 40, 42). hydrogen anneal using 4-5% remainder nitrogen is performed to reduce dangling atomic bonds at the gate dielectric/substrate interface of silicon nitride layer (48) then deposited over backside wafer in order substantially encapsulate effects Ferroelectric capacitor layers (54, 58, 60, 62, 64) are formed overlying where oxygen annealed pure O 2 . The prevents transistor from damaging material containing hydrogen.