Method for forming a ceramic oxide capacitor having barrier layers
作者： Norman E. Abt , Yoav Nissan-Cohen , Reza Moazzami
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摘要: An electrical ceramic oxide capacitor utilizable in an integrated circuit memory device, and a method for making same is presented. A transistor fabricated on semiconductor substrate according to conventional techniques. diffusion barrier deposited over the protect it from subsequent process steps. Metal contacts are formed contact active regions substrate, additional barriers insulate metal contacts. In vertical embodiment, above can serve as bottom electrodes capacitor. lateral side of Electrical material between electrode plates.
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