Resistive memory reset
作者： Kuo-Chi Tu , Hsia-Wei Chen , Yu-Wen Liao , Chih-Yang Chang , Wen-Ting Chu
DOI:
关键词:
摘要: A resistive memory cell includes a switch and switching device. The first terminal connected to select line gate word line. device is between second of the bit resettable by having positive bias applied negative
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