Capacitor that includes high permittivity capacitor dielectric

作者: Chenming Hu , Yee-Chia Yeo

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摘要: A decoupling capacitor is formed on a semiconductor substrate that includes silicon surface layer. substantially flat bottom electrode in portion of the dielectric overlies electrode. The from high permittivity with relative permittivity, preferably greater than about 5. also top dielectric. In preferred application, connected to first reference voltage line and second line.