Tailored insulator properties for devices

摘要: A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The comprise the steps of, first, substantially completing manufacture a device, which device contains insulator in polycrystalline form. as capacitor, or an FET, went through typically temperature manufacturing process fabrication line. In next step, is situ ion implanted with dose energy to convert fraction material into amorphous state, hereby insulator. converted might be 1. This can applied many electronic some optical devices. results novel materials fabricated materials.