Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell

摘要: The invention comprises methods of forming capacitors, processing dielectric layers, and a DRAM cell. In one implementation, method layer high K oxygen containing over substrate. is annealed at temperature least about 200° C. pressure 50 Torr in an ozone comprising atmosphere. another annealing the conducted 0.1 atmosphere which void plasma. Pressures greater than are most preferred. capacitor substrate 300° activated produced part from subjected to remote microwave ideally implemented fabrication, more particularly circuitry fabrication.