RRAM memory cell electrodes
作者： Wei-Wei Zhuang , Wei Pan , Fengyan Zhang , Tingkai Li , Sheng Teng Hsu
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摘要: A RRAM memory cell is formed on a silicon substrate having operative junction therein and metal plug thereon, includes first oxidation resistive layer; refractory CMR second layer. method of fabricating multi-layer electrode preparing substrate; forming in the taken from group junctions consisting N+ P+ junctions; depositing junction; resistant layer plug; completing cell.
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