Method for decreasing a dielectric constant of a low-k film

摘要: A method of forming a low dielectric constant film that can be used in damascene process is disclosed. An organosilicon precursor such as octamethylcyclotrisiloxane (OMCTS) or any other compound contains Si, C, and H optionally O transported into PECVD chamber with carrier gas CO CO2 to provide soft oxidation environment leads higher carbon content k value the deposited film. The may replace helium argon have bombardment property damage substrate. Since contribute film, lower achieved than when an inert employed. employed, for example, layer stack etch stop layer.