Hydrogenated oxidized silicon carbon material
作者： Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel , Alfred Grill , Laurent Claude Perraud
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摘要: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect in IC chips is disclosed. Also disclosed a method for fabricating constant utilizing plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of materials that are prepared by the further To enable fabrication film, specific precursor having ring structure preferred.
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