作者: Panayotis Constantinou Andricacos , David Edward Kotecki , Katherine Lynn Saenger , Alejandro Gabriel Schrott , Vishnubhai Vitthalbhai Patel
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摘要: Noble metal plating on a preexisting seed layer is used in the fabrication of electrodes for DRAM and FRAM. The may be spatially selective or nonselective. In nonselective case, blanket film first plated then patterned after deposition by material removal. deposits are either selectively grown lithographically defined areas through-mask technique, as conformal coating exposed regions electrode structure. A diamond-like carbon mask can process. self-aligned process disclosed insulators