Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
作者： M.D. Groner , J.W. Elam , F.H. Fabreguette , S.M. George
DOI: 10.1016/S0040-6090(02)00438-8
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摘要: … O 3 ALD that are larger than expected from the Al 2 O 3 ALD … 7 for Al 2 O 3 ALD films grown at 177 C on moderately doped … the Al 2 O 3 ALD films grown on moderately doped n-type Si(…
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