Magnetoresistive Random Access Memory

摘要: Magnetoresistive random access memory (MRAM) offers the potential of a universal memory, as it can simultaneously be fast, non-volatile, dense, and show high-endurance. MRAM differs from earlier incarnations magnetic in that tightly couples electronic readout with storage compact device structure is competitive state-of-the-art semiconductor memories. While small-scale demonstrations have realized much MRAM, shrinking cell size or embedding logic circuitry creates difficult challenges. This chapter provides an overview basic structure, including explanation functions various elements complex multilayer film stack. The principles circuit design operation are outlined, together detailed examination single-bit cell. A discussion techniques developed to fabricate large arrays devices high yield also included, addition some aspects reliability for scaling future generations. Keywords: magnetoresistive memory; tunnel junction; multilayers; ferromagnet; magnetic storage; memory architecture