Quantum size and magnesium composition effects on the optical absorption in the Mg Zn(1−)O/ZnO quantum well

作者: Hassen ben Bechir Dakhlaoui , Nefzi Mouna

DOI: 10.1016/J.CPLETT.2018.01.010

关键词:

摘要: Abstract In this work, we investigated the effects of polarizations and structural parameters on optical absorption coefficient (OAC) intersubband transition between three lowest energy levels E 1 , 2 3 in MgxZn(1−x)O/ZnO single quantum well. The electron each level its respective wavefunction are calculated by numerical solution Schrodinger Poisson equations self-consistently using an effective mass approximation. Our findings exhibit that transitions, Δ 12 13 can be altered controlled varying well width magnesium composition, x. Moreover, our results suggest coefficients, α modulated principally adjusting width, especially ( ), which presents a red shift raising thickness. Contrary to coefficient, present either or blue increasing width. process responsible for behavior, suitable optoelectronic device applications, is discussed here detail.

参考文章(27)
M. A. Remnev, I. Yu. Kateev, V. F. Elesin, Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode Semiconductors. ,vol. 44, pp. 1034- 1039 ,(2010) , 10.1134/S1063782610080142
P. K. Kandaswamy, F. Guillot, E. Bellet-Amalric, E. Monroy, L. Nevou, M. Tchernycheva, A. Michon, F. H. Julien, E. Baumann, F. R. Giorgetta, D. Hofstetter, T. Remmele, M. Albrecht, S. Birner, Le Si Dang, GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance Journal of Applied Physics. ,vol. 104, pp. 093501- ,(2008) , 10.1063/1.3003507
M. Nagel, P. Haring Bolivar, M. Brucherseifer, H. Kurz, A. Bosserhoff, R. Büttner, Integrated THz technology for label-free genetic diagnostics Applied Physics Letters. ,vol. 80, pp. 154- 156 ,(2002) , 10.1063/1.1428619
Congxin Xia, Heng Zhang, Jiao An, Shuyi Wei, Yu Jia, Tunable built-in electric field and optical properties in wurtzite ZnO/MgZnO quantum wells Physics Letters A. ,vol. 378, pp. 2251- 2255 ,(2014) , 10.1016/J.PHYSLETA.2014.05.015
M. Tchernycheva, L. Nevou, L. Doyennette, F. H. Julien, F. Guillot, E. Monroy, T. Remmele, M. Albrecht, Electron confinement in strongly coupled GaN /AlN quantum wells Applied Physics Letters. ,vol. 88, pp. 153113- ,(2006) , 10.1063/1.2193057
Wei Zhang, Yue Zhang, JunShuai Xue, Ying Zhang, Ling Lv, JinCheng Zhang, Yue Hao, Interaction between Si doping and the polarization-induced internal electric field in the AlGaN/GaN superlattice Applied Physics Letters. ,vol. 99, pp. 162105- ,(2011) , 10.1063/1.3655469
T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita, H. Koinuma, Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells Applied Physics Letters. ,vol. 78, pp. 1979- 1981 ,(2001) , 10.1063/1.1357451
S. Sakr, E. Warde, M. Tchernycheva, F. H. Julien, Ballistic transport in GaN/AlGaN resonant tunneling diodes Journal of Applied Physics. ,vol. 109, pp. 023717- ,(2011) , 10.1063/1.3533975