Annealing behavior of deep‐level defects in semi‐insulating gallium arsenide studied by photoluminescence, infrared absorption, and resistivity mapping

摘要: Deep‐level defects in as‐grown, ingot‐annealed, and wafer‐annealed samples of semi‐insulating gallium arsenide have been investigated by spatially resolved measurements room‐temperature photoluminescence, infrared absorption, free‐carrier lifetime, resistivity. High‐temperature ingot annealing mainly causes a homogenization the EL2 distribution. Rapid cooling from wafer process at T>900 °C suppresses formation previously lifetime‐limiting recombination center. After defect may be dominant center, while as‐grown ingot‐annealed material lifetime is limited different trap. There experimental evidence that this trap related to 0.8‐eV luminescence band its density anticorrelated Based on correlation photoluminescence topographs, we developed model, which explains relationship between densities, photo...