Thermally stable high-k tetragonal hfo2 layer within high aspect ratio deep trenches
作者： Michael P. Chudzik , Bachir Dirahoui , Paul C. Parries , Rishikesh Krishnan , Oh-Jung Kwon
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摘要: A trench structure that in one embodiment includes a present substrate, and dielectric layer is continuously on the sidewalls base of trench. The has constant greater than 30. composed tetragonal phase hafnium oxide with silicon grain boundaries an amount ranging from 3 wt. % to 20 %.
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