Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition
作者： M.-H. Cho , Y. S. Roh , C. N. Whang , K. Jeong , S. W. Nahm
DOI: 10.1063/1.1487923
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摘要: The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics deposited by atomic-layer deposition (ALD) were investigated. chemical state the films in relation to film thickness postannealing temperature examined x-ray diffraction photoelectron spectroscopy. An interfacial layer hafnium silicate with an amorphous was grown on oxidized Si substrate at initial growth stage. are closely affected depended films. 45 A thick changed into a polycrystalline after rapid annealing 750 °C 5 min, while thicker monoclinic or tetragonal crystal structure. region is not stable even 700 °C under ultrahigh vacuum condition...
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M.-H. Cho, D.-H. Ko, Y. G. Choi, K. Jeong, I. W. Lyo, D. Y. Noh, H. J. Kim, C. N. Whang, Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 19, pp. 192- 199 ,(2001) , 10.1116/1.1331296
G. D. Wilk, R. M. Wallace, J. M. Anthony, Hafnium and zirconium silicates for advanced gate dielectrics Journal of Applied Physics. ,vol. 87, pp. 484- 492 ,(2000) , 10.1063/1.371888
V. Mikhelashvili, G. Eisenstein, Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation Journal of Applied Physics. ,vol. 89, pp. 3256- 3269 ,(2001) , 10.1063/1.1349860
Byoung Hun Lee, Laegu Kang, Renee Nieh, Wen-Jie Qi, Jack C. Lee, Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing Applied Physics Letters. ,vol. 76, pp. 1926- 1928 ,(2000) , 10.1063/1.126214
T. M. Klein, D. Niu, W. S. Epling, W. Li, D. M. Maher, C. C. Hobbs, R. I. Hegde, I. J. R. Baumvol, G. N. Parsons, Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100) Applied Physics Letters. ,vol. 75, pp. 4001- 4003 ,(1999) , 10.1063/1.125519
M. Copel, M. Gribelyuk, E. Gusev, Structure and stability of ultrathin zirconium oxide layers on Si(001) Applied Physics Letters. ,vol. 76, pp. 436- 438 ,(2000) , 10.1063/1.125779
G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, R. S. Urdahl, Intermixing at the tantalum oxide/silicon interface in gate dielectric structures Applied Physics Letters. ,vol. 73, pp. 1517- 1519 ,(1998) , 10.1063/1.122191
Ilaria Pallecchi, Giuseppe Grassano, Daniele Marré, Luca Pellegrino, Marina Putti, Antonio Sergio Siri, SrTiO3-based metal–insulator–semiconductor heterostructures Applied Physics Letters. ,vol. 78, pp. 2244- 2246 ,(2001) , 10.1063/1.1363690
Byoung Hun Lee, Yongjoo Jeon, Keith Zawadzki, Wen-Jie Qi, Jack Lee, Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon Applied Physics Letters. ,vol. 74, pp. 3143- 3145 ,(1999) , 10.1063/1.124089
S.A. Campbell, D.C. Gilmer, Xiao-Chuan Wang, Ming-Ta Hsieh, Hyeon-Seag Kim, W.L. Gladfelter, Jinhua Yan, MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics IEEE Transactions on Electron Devices. ,vol. 44, pp. 104- 109 ,(1997) , 10.1109/16.554800