Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3
作者： M.-H. Cho , H. S. Chang , Y. J. Cho , D. W. Moon , K.-H. Min
DOI: 10.1063/1.1633976
关键词:
摘要: Al2O3 incorporated HfO2 films grown by atomic layer deposition were investigated using various measurement tools. The accumulation capacitance of the into film increases as postannealing temperature because changes in interfacial and upper thickness stoichiometry. core-level energy state a 15 A thick shows shift to higher binding energy, result silicate formation incorporation. incorporation has no effect on at interface between Si, while ionic bonding characteristics hybridization effects are enhanced compared pure film. Any dissociated surface is completely removed vacuum annealing treatment over 850 °C, contributes Hf silicide
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