Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone

摘要: We examined the structure around interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS) to investigate interfacial displacement an ultrathin silicon dioxide formed by oxidation a Si(100) substrate with atmospheric-pressure ozone at temperature 375 °C. A thermally grown oxide same thickness as ozone-formed was also measured MEIS for comparison. The exhibited considerably less in layers near than oxide, which indicates that is homogenous. These results explain well our previous findings exhibits constant HF etching rate while slows interface.