Direct observation of Si lattice strain and its distribution in the Si(001)–SiO2 interface transition layer
作者： Young Pil Kim , Si Kyung Choi , Hyun Kyong Kim , Dae Won Moon
DOI: 10.1063/1.120373
关键词: Vertical direction 、 Spectroscopy 、 Ion beam mixing 、 Ion 、 Ion beam 、 Silicon 、 Scattering 、 Atomic physics 、 Materials science 、 Deformation (engineering) 、 Molecular physics
摘要: In the transition layer of Si(001)–SiO2 interface, Si lattice strain and its distribution were directly observed by medium energy ion scattering spectroscopy for thermal beam oxides. The was in vertical direction, maximum values at SiO2 side 0.96% 2.8% oxides, respectively.
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