作者: J.T. Luo , X.Y. Zhu , G. Chen , F. Zeng , F. Pan
DOI: 10.1016/J.APSUSC.2011.02.093
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摘要: Abstract In this paper, the influences of Si-doping on electrical, optical and magnetic properties ZnO films have been systematically investigated. It is found that resistivity decreases from 3.0 × 10 3 to 6.2 × 10 –2 Ωcm with due increase carrier concentration. The bandgap increases 3.28 3.52 eV increasing Si concentration, which be collective effects narrowing Burstein–Moss effect induced by high With near band edge (NBE) emission deterioration crystal quality, while yellow enhances extrinsic impurity or defects. additional has a profound influence enhancement property maximum moment 2.6 μ B /Si obtained. ferromagnetic ordering seen correlated concentration structural