Ferroelectric thin films for monolithic optical devices

作者: D. K. Fork , F. Armani-Leplingard , J. J. Kingston

DOI: 10.1080/10584589508220216

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摘要: Abstract Though many technical barriers must be crossed, current trends in materials fabrication suggest several routes to integrating electrooptic and nonlinear optical monolithically with silicon III-V semiconductor technology. These approaches include poled organic polymers, fused silica, polycrystalline or epitaxially grown dielectric ferroelectric oxide thin films. Optical waveguides fabricated from these may enable applications integrated optics such as frequency doublers modulators. Although the principal work our laboratory is on heterostructures GaAs sapphire, introduction highlights progress of other approaches. Because losses limit feasibility device structures, considerable discussion devoted this topic. The use atomic force microscopy predict scattering losses. summary preceeded by some brief remarks about poling.

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