Flash memory cell with self-aligned gates and fabrication process
作者： Chiou-Feng Chen
DOI:
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摘要: Nonvolatile memory cell and process in which a control gate or thick dielectric film is used as mask the formation of floating also step alignment select gate. The relatively thin has side wall with rounded curvature which, some embodiments, serves tunneling window for electrons migrating to during erase operations. In other oxide beneath thin, tunnel through source region substrate below.
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