Comparative analysis of 3D Flexure Gate FET with different metal and gate structure
作者： Pralay Chakrabarty , Koushik Guha , Gautam Krishna , Srimanta Baishya
DOI: 10.1109/ICIIECS.2015.7193079
关键词:
摘要: This paper deals with the design and simulation of Flexure Gate Field Effect Transistor (Flexure-FET) comparative analysis different structures gate using gold (Au) poly-silicon. presents investigation pull-in voltage change in capacitance between channel due to actuation. The effect displacement is reflected drain current characteristics FET ratio ON / OFF investigated for higher sensitivity. has been carried out fixed-fixed suspended uniform meander, non-uniform meander at four corner without configurations also von Mises stress each structure demonstrated this paper.
07193079.pdf 参考文章(16)
Ki Bang Lee, None, Principles of Microelectromechanical Systems ,(2011)
J.A. Segovia, M. Fernandez-Bolailos, J.M. Quero, Design of a programmable pressure switch suspended gate MOSFET spanish conference on electron devices. pp. 525- 528 ,(2005) , 10.1109/SCED.2005.1504505
V. Pott, A.M. Ionescu, R. Fritschi, C. Hibert, P. Fluckiger, M. Declercq, P. Renaud, A. Rusu, D. Dobrescu, L. Dobrescu, The suspended-gate MOSFET (SG-MOSFET): a modeling outlook for the design of RF MEMS switches and tunable capacitors international semiconductor conference. ,vol. 1, pp. 137- 140 ,(2001) , 10.1109/SMICND.2001.967431
Wen-Ming Zhang, Han Yan, Zhi-Ke Peng, Guang Meng, None, Electrostatic pull-in instability in MEMS/NEMS: A review Sensors and Actuators A: Physical. ,vol. 214, pp. 187- 218 ,(2014) , 10.1016/J.SNA.2014.04.025
Cevher Ak, Ali Yildiz, An Inversely Designed Model for Calculating Pull-In Limit and Position of Electrostatic Fixed-Fixed Beam Actuators Mathematical Problems in Engineering. ,vol. 2014, pp. 1- 7 ,(2014) , 10.1155/2014/391942
Tejinder Singh, Effective Stress Modeling of Membranes Made of Gold and Aluminum Materials Used in Radio-Frequency Microelectromechanical System Switches Transactions on Electrical and Electronic Materials. ,vol. 14, pp. 172- 176 ,(2013) , 10.4313/TEEM.2013.14.4.172
A. Jain, P. R. Nair, M. A. Alam, Flexure-FET biosensor to break the fundamental sensitivity limits of nanobiosensors using nonlinear electromechanical coupling Proceedings of the National Academy of Sciences of the United States of America. ,vol. 109, pp. 9304- 9308 ,(2012) , 10.1073/PNAS.1203749109
Wen-Ming Zhang, Guang Meng, DI Chen, None, Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices. Sensors. ,vol. 7, pp. 760- 796 ,(2007) , 10.3390/S7050760
Kerem Akarvardar, Christoph Eggimann, Dimitrios Tsamados, Yogesh Singh Chauhan, Gordon C. Wan, Adrian Mihai Ionescu, Roger T. Howe, H.-S. Philip Wong, Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic IEEE Transactions on Electron Devices. ,vol. 55, pp. 48- 59 ,(2008) , 10.1109/TED.2007.911070
A.M. Ionescu, V. Pott, R. Fritschi, K. Banerjee, M.J. Declercq, P. Renaud, C. Hibert, P. Fluckiger, G.A. Racine, Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG-MOSFET) with a metal-over-gate architecture international symposium on quality electronic design. pp. 496- 501 ,(2002) , 10.1109/ISQED.2002.996794