Pb/Ge(111): Formation of the Interface Under Thermodynamic Equilibrium

摘要: In the last years a considerable effort has been undertaken to determine structural and electronic properties of metal/semiconductor interface in course its formation. Much less attention paid energetics system although such quantities are main interest understand elementary processes involved e.g. adsorption site, appearance ordered phases, growth mode, epitaxy, etc. this respect nearly all results acquired until now, were obtained using kinetics experiments |1|. However, interpretation kinetic data is indirect (e.g. activation energies desorption...) requires specific models as one we developed for desorption two-dimensional (2D) adsorbed phases |2|. Instead performing out equilibrium which, besides, might concern only metastable surface it would be highly desirable establish conditions thus directly investigate thermodynamics adsorbate-substrate systems. Indeed currently performed weakly physisorbed systems rare gases on graphite |3|. Very recently similar physisorbtion experiment was carried Si(111)7x7 |4|: Xenon Krypton studied probe 7x7 reconstruction with goal counting number sites measuring binding them without disrupting Si structure. However if easy install gas phase much more difficult an metal; very few available: our knowledge two metal adsorptions have investigated manner: -i- Hg chemisorbed W(l00) |5|; -ii- Cs GaAs (11O) |6|. Recently presented preliminary Ag Si(111) |7|.