Structural study of ultrathin Sn layers deposited onto Ge(111) and Si(111) surfaces by RHEED

摘要: Abstract In order to investigate the possibility of appearance substrate-stabilized gray Sn, a small amount Sn was deposited onto cleaned and annealed Ge(111) (2 × 8) Si(111) (7 7) surfaces in an ultrahigh vacuum then structure films formed in-situ investigated by RHEED. The RHEED observations showed that ultrathin overlayers were formed, though not well grown, at initial stage deposition substrates room temperature, but on further they became disordered did grow into thick Sn. Subsequent high-temperature annealing Sn-covered led five new surface structures such as (3 2 3 ) ( 91 Ge(111)Sn 133 4 , 7 R (30 ± 10.9°) 3.0°) Si(111)Sn surfaces.