Addendum to Empty- and Filled-Electronic States of the Si(111)\(\sqrt{3}{\times}\sqrt{3}\)-Sn \(\sqrt{3}{\times}\sqrt{3}\)-In and \(2\sqrt{3} {\times} 2\sqrt{3}\)-Sn Surfaces

摘要: Momentum-resolved inverse photoemission spectra have been measured for Si(111) \(\sqrt{3}\times \sqrt{3}\)-Sn and -In surfaces. An empty part of the metallic surface-state band is observed. It noted that (including filled parts) surface disperses in same manner as \sqrt{3}\)-In surface. This consistent with previous proposal atomic arrangements \sqrt{3}\)-column III surfaces are identical to each other. For Si(111)\(2\sqrt{3}\times 2\sqrt{3}\)-Sn surface, momentum-resolved coverage-dependent angle-resolved measured. has found \(2\sqrt{3}\times semiconducting at least two filled- one empty-surface-state bands exist bulk gap.