Concerning growth of single crystal of the II-IV-V diamond-like compounds ZnSiP2, CdSiP2, ZnGeP2, and CdSnP2 and standard enthalpies of formation for ZnSiP2 and CdSiP2

摘要: Single crystals of the diamond-like tetragonal compounds ZnSiP2, CdSiP2 and CdSnP2 were grown by vapor transport precipitation from liquid Sn. ZnGeP2 directly stoichiometric melts. The experiments carried out in temperature range 800–1200°C unsupported thick-walled quartz ampoules. These materials exhibit dissociation pressures excess 8 atm at 1000 °C. Total equilibrium decomposition determined 1000–1500 °K. Standard enthalpies formation estimated for ZnSiP2 compared to a theoretical estimate. pressure increases rather sharply melting point (1025 °C). In contrast CdSiP2, is less than 4 atmospheres °C gaseous product consists essentially phosphorous 850–1150