Solution growth of CdGeAs2

摘要: Single crystals of CdGeAs2, a material important for IR nonlinear optical applications, have been prepared by crystallization from solution using bismuth as solvent. Two growth techniques were utilized: free and unidirectional solidification in temperature gradient. The CdGeAs2—Bi phase diagram shows that CdGeAs2 can be obtained over wide range compositions, although at Bi concentrations greater than 46 mole %, GeAs was found to crystallize first. A modified solvent containing small amounts Cd As developed eliminate the field. Various crystal characteristics, including morphology, structural integrity, inclusions, twinning transparency studied function conditions.