作者: Mohd Anis , G.G. Muley , M.I. Baig , G. Rabbani , H.A. Ghramh
DOI: 10.1016/J.IJLEO.2018.10.061
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摘要: Abstract In current trending photonic and optoelectronic devices the KH2PO4 (KDP) crystal seek prime importance hence in present communication we explore decisive impact of Ni2+ on linear-nonlinear optical, dielectric microhardness properties KDP crystal. The doped bulk single has been successfully grown by slow solvent evaporation technique. doping Ni matrix determined means energy dispersive spectroscopic analysis. powder X-ray diffraction technique employed to evaluate crystalline phase structural parameters influence linear optical transmittance comparatively examined within 200–1100 nm UV–vis pure subjected Kurtz-Perry test remarkably enhanced SHG efficiency is found be 3.89 times higher than frequency response constant loss undoped evaluated 50 Hz 1 MHz. constructive confirmed Vickers